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| Ordering number : ENN5183B 2SA1968LS PNP Triple Diffused Planar Silicon Transistor 2SA1968LS High-Voltage Amplifier, High-Voltage Switching Applications Features * * * * Package Dimensions unit : mm 2079D [2SA1968LS] 10.0 3.2 4.5 2.8 High breakdown voltage(VCEO min=-900V). Small Cob(Cob typ=2.2pF). High reliability(Adoption of HVP process). Package of full isolation type. 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 123 14.0 0.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.55 2.55 2.4 0.6 Ratings --900 --900 --7 --10 --30 2 150 --55 to +150 Unit V V V mA mA W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=-900V, IE=0 VEB=-5V, IC=0 Ratings min typ max --1 --1 Unit A A Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1501 TS IM / 91098 HA (KT) / 92095 YK (KOTO) TA-0439 No.5183-1/3 2SA1968LS Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Transient Thermal Resistance Symbol hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Rth(j-c) Conditions VCE=--5V, IC=--1mA VCE=--10V, IC=--1mA VCB=--100V, f=1MHz IC=--500A, IB=--100A IC=--500A, IB=--100A IC=--100A, IE=0 IC=--1mA, RBE= IE=--100A, IC=0 junction-case --900 --900 --7 8.3 Ratings min 20 6 2.2 --1 --1.5 typ max 50 MHz pF V V V V V C / W Unit --45 --50 A A --1.0 IC -- VCE --4 0 --35A --30A Collector Current, IC -- mA --10 IC -- VCE . --1 6m A A mA .4 --1 Collector Current, IC -- mA --0.8 --8 --0.6 --20A --15A --6 --2 . 0m A --25A . --1 8m A 2mA --1. --1.0m A 00 --8 0A --60 A A --400 --200A --150A --0.4 --4 --10A --0.2 --100A --2 --5A IB=0 0 --2 --4 --6 --8 --10 IT03904 --50A IB=0 0 --2 --4 --6 --8 --10 IT03905 0 0 Collector-to-Emitter Voltage, VCE -- V --10 --9 IC -- VBE(ON) Collector-to-Emitter Voltage, VCE -- V 100 hFE -- IC VCE= --5V Collector Current, IC -- mA --8 --7 --6 7 5 VCE= --5V Ta=120C DC Current Gain, hFE 3 2 25C Ta=120C --40C --5 --4 --3 --2 --1 0 0 --0.2 --0.4 25C --40C 10 7 5 3 2 --0.6 --0.8 --1.0 --1.2 --1.4 7 --0.1 2 3 5 7 --1.0 2 3 5 Base-to-Emitter ON Voltage, VBE(ON) -- V 2 --10 7 5 3 IT03906 3 VCE(sat) -- IC Collector Current, IC -- mA 7 --10 2 IT03907 VBE(sat) -- IC IC / IB=5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 IC / IB=5 --1.0 7 5 Ta= --40C 12 0 25 C C 2 --1.0 7 5 3 2 --0.1 7 --0.1 2 3 5 7 --1.0 2 --4 0 25C 120C Ta = C 3 2 --0.1 3 5 7 --10 2 3 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- mA IT03908 Collector Current, IC -- mA 7 --10 2 IT03909 No.5183-2/3 2SA1968LS 2 fT -- IC VCE= --10V 5 3 Cob -- VCB f=1MHz Gain-Bandwidth Product, fT -- MHz 7 5 3 2 Output Capacitance, Cob -- pF --10 2 10 7 5 3 2 1.0 7 5 3 2 --1.0 7 5 3 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- mA 5 3 7 --10 IT03910 2.4 7 --1.0 2 3 5 7 --10 2 3 5 7--100 2 3 Forward Bias A S O Collector-to-Base Voltage, VCB -- V 57 --1000 2 IT03911 PC -- Ta ICP= --30mA 100s Collector Current, IC -- mA 2 50 10 m 1m --10 7 5 3 2 IC= --10mA DC operation s s 0 s Collector Dissipation, PC -- W 2.0 1.6 No 1.2 he at sin k 0.8 0.4 --1.0 5 Ta=25C Single pulse 7 --100 2 3 5 7 --1000 2 IT03912 0 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- C IT03913 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of Novermber, 2001. Specifications and information herein are subject to change without notice. PS No.5183-3/3 |
Price & Availability of 2SA1968LS
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